| PART |
Description |
Maker |
| LRC-LR1206-01-R033-F |
RESISTOR, CURRENT SENSE, 0.5 W, 1 %, 100 ppm, 0.033 ohm, SURFACE MOUNT, 1206 CHIP
|
IRC Advanced Film
|
| HTS00682004FPA20 HTS00631006FPA20 HTS00684875FPA20 |
HTS High Ohmic Values (up to 100 Gohm), High Voltage Resistors (up to 50 kV) Thick Film Technology
|
Vishay Sfernice
|
| FDP3672 FDP3672NL |
N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 Package 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench MOSFET 105V, 41A, 33mз 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| JANS1N5712UR-1 1N5711UR-1 1N5712UR-1 1N6857UR-1 1N |
Schottky Rectifier
5-V Precision Micropower Shunt Voltage Reference, 1% accuracy 3-SOT-23 -40 to 125 0.033 A, SILICON, SIGNAL DIODE, DO-213AA
SCHOTTKY BARRIER DIODES 0.033 A, SILICON, SIGNAL DIODE, DO-213AA
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| FS50R12KE3 |
H?chstzul?ssige Werte / maximum rated values
|
Infineon Technologies AG
|
| KC1850 |
C-values 220 pF - 0.01 μF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5
|
Vishay
|
| MKT1813 |
C-values 470 pF - 22 μF, Voltage 63 - 1000 VDC, Low Profile, AXIAL
|
Vishay
|
| BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values 170 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
ETC
EUPEC[eupec GmbH]
|
| NTHS0402 NTHS0805 NTHS0603 NTHS1206N06N2201JE |
Extended resistance values available in standard sizes, Allows design flexibility for use with hybrid circuitry
|
Vishay Siliconix
|
| BSM35GD120DLC BSM35GD120DLCE3224 |
High Efficient Rectifier Diodes
IGBT-Module Maximum rated values
|
eupec GmbH
|
|
